The Thermoelectric Optimization of Bismuth Telluride at 300K

Jed Hennessy

doi:10.59973/emjsr.227

Authors

Jed Hennessy School of Mathematics and Physics, University of Portsmouth, Portsmouth, United Kingdom

DOI:

https://doi.org/10.59973/emjsr.227

Keywords:

Bismuth Telluride, Thermoelectric Materials, Figure of Merit, Carrier Concentration, Material Optimization

Abstract

This project explores the thermoelectric properties of Bismuth Telluride (Bi₂Te₃) at 300 K, with the aim of finding the highest possible figure of merit (ZT) by optimizing key material parameters. The goal is to assess how an optimized sample of Bi₂Te₃ could be used in real thermoelectric devices. Using a simulation that includes realistic values for band structure and scattering properties from experimental data, we predicted how ZT changes under different conditions. In this project we focused on improving thermoelectric efficiency by adjusting parameters like carrier concentration, while keeping the band structure close to that of the real material. Our results matched well with published values, suggesting the simulation is reliable. We then
tested how far ZT could be improved by increasing carrier concentration and found an optimal range that agreed with values reported in the literature. Finally, the simulation was extended to include possible effects from advanced manufacturing techniques and nanoscale engineering, to see if ZT could be increased further. Overall, this project highlights the key factors that affect the thermoelectric performance of (Bi₂Te₃) and shows how simulation-based optimization can help guide future improvements in material design.

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