The role of ferromagnets and antiferromagnets for spintronic memory applications and their impact in data storage:  Spintronic Memory Applications

Marinos Ioannou

doi:10.59973/emjsr.6

Authors

Marinos Ioannou University of Portsmouth

DOI:

https://doi.org/10.59973/emjsr.6

Keywords:

ferromagnets, antiferromagnets, spintronic memory applications, data storage, spintronics, MRAM, giant magnetoresistance (GMR), tunnelling magnetoresistance (TMR)

Abstract

The manipulation of multifunctional properties associated with ferromagnetic and antiferromagnetic materials has a great impact in information technology and digital data storage. A relatively recent field called spintronics is a promising alternative technology to store data more efficiently and to overcome obstacles that conventional electronics face. This article provides a small introduction to spintronic devices used for memory applications such as hard disk drives and MRAM, and details ways by which magnetization inside magnetic layers such as ferromagnets can be flipped. The giant magnetoresistance (GMR) effect and its successor in developing memory devices; the tunnelling magnetoresistance (TMR) effect are also discussed since they are key in developing magnetic memory devices.

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