A Brief Overview of Present and Future Random Access Memories

Chris Warden

doi:10.59973/ipil.39

Authors

Chris Warden University of Portsmouth

DOI:

https://doi.org/10.59973/ipil.39

Keywords:

RAM, Non volatile random access memory, Multi state RAM technologies

Abstract

Smart phones in our pockets today are thousands of times more powerful than the computer used to put a man on the moon. The advancement in technology over the past few decades has been nothing short of astounding, but this rate of progress is declining as we reach the limits of our current technologies. In this mini review article, we explore some of the current technologies used in computing - specifically Random Access Memory (RAM), and seek to make improvements to the core structure by using a new and exciting class of materials known as multiferroics. We also look at how these materials interact, what makes them interesting for our purposes, and how they can improve our technological prowess.

References

Markov, I., 2014. Can computers continue to get smaller and more powerful? Available at: https://www.nsf.gov/news/news_summ.jsp?cntn_id=132339

https://www.allaboutcircuits.com/technical-articles/introduction-to-dram-dynamic-random-access-memory/

Tyson, J. and Coustan, D., n.d. How RAM Works. HowStuffWorks. Available at: https://computer.howstuffworks.com/ram.htm

Liu, J., Jaiyen, B., Kim, Y., Wilkerson, C. and Mutlu, O., 2013. An Experimental Study of Data Retention Behavior in Modern DRAM Devices: Implications for Retention Time Profiling Mechanisms. Available at: https://www.pdl.cmu.edu/PDL-FTP/NVM/dram-retention_isca13.pdf DOI: https://doi.org/10.1145/2485922.2485928

Sparsh Mittal. A survey of architectural techniques for DRAM power management, International Journal of High Performance Systems Architecture (IJHPSA), InterScience, 2012, 4 (2), pp.110 - 119. DOI: https://doi.org/10.1504/IJHPSA.2012.050990

https://www.globalsino.com/EM/page1804.html

https://www.ti.com/lit/wp/slat151/slat151.pdf

http://loto.sourceforge.net/feram/doc/film.xhtml#(4)

Web.archive.org. 2006. Welcome to Freescale Semiconductor - News Release. Available at: https://web.archive.org/web/20071013124650/http://media.freescale.com/phoenix.zhtml?c=196520&p=irol-newsArticle&ID=880030

http://www.engadget.com/2008/06/02/toshiba-says-its-1gb-mram-chips-are- almost-ready-were-ready/

Vopson, M, Fundamentals of multiferroic materials and their possible applications, Critical Reviews in Solid State and Materials Sciences, vol. 40, no. 4, pp. 223-250 (2015) https://doi.org/10.1080/10408436.2014.992584 DOI: https://doi.org/10.1080/10408436.2014.992584

Bibes M, Barthélémy A. Multiferroics: towards a magnetoelectric memory. Nat Mater. 2008 Jun;7(6):425-6. https://www.nature.com/articles/nmat2189 DOI: https://doi.org/10.1038/nmat2189

M. Vopson, X. Tan, Electron Device Letters 37 (12), 1551-1554 (2016) DOI: 10.1109/LED.2016.2614841 DOI: https://doi.org/10.1109/LED.2016.2614841

M. Vopson, G. Caruntu, X. Tan, Scripta Materialia vol. 128, 61-64 (2017) https://doi.org/10.1016/j.scriptamat.2016.10.004 DOI: https://doi.org/10.1016/j.scriptamat.2016.10.004

M. Vopson, X. Tan, Physical Review B 96 (1), 014104 (2017) https://doi.org/10.1103/PhysRevB.96.014104 DOI: https://doi.org/10.1103/PhysRevB.96.014104

Morris, Daniel H., Uygar E. Avci, and Ian A. Young. "Anti-ferroelectric capacitor memory cell." U.S. Patent No. 11,355,504. 7 Jun. 2022.